Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random AccessMemory (DRAM), today announced silicon development of the industry's first 1Gigabit DDR2 SDRAM device at 800 Megabits per second (Mbps) operation(DDR2-800). The device surpassed the maximum speed currently available forhigh-end server applications- the DDR2-667 specification which is currentlyunder consideration by JEDEC.
The device uses high-performance transistors with 100 nm process technology,and also has an optimized layout design that reduces speed bottlenecks on thesignal and data paths in the memory array and peripherals-this allows for 800Mbps operation even in a high-density, 1 Gigabit device. These advancements inprocess and design allow Elpida to create a device that matches the high-speed,high-density, low-power requirements demanded by performance-driven markets.
"This 1 Gigabit device running at 800 Mbps speed was made possible byutilizing 100 nm process DRAM combined with a superior layout design," saidYukio Sakamoto, president of Elpida Memory. "Future DRAM products demandimprovements in power and speed to offer the significant performance gains thatare crucial to the high-end server market. Elpida's latest achievementdemonstrates that we have the technical capabilities to meet this challenge."
The market is not ready for such advanced products in applications today;however, Elpida has the ability to offer DDR2-800 devices based on marketdemand.
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